Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2813 2823 2824 2893 2899
This examiner grants 80% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18497363 | SEMICONDUCTOR DEVICE INCLUDING ESD DIODE AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18295867 | SEMICONDUCTOR DEVICES | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18125512 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18085331 | SEMICONDUCTOR DEVICES | Final Rejection | SAMSUNG ELECTRONICS CO, LTD. |
| 17961172 | SEMICONDUCTOR DEVICE | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18505682 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18560149 | CIRCUITRY PACKAGE FOR POWER APPLICATIONS | Non-Final OA | Telefonaktiebolaget LM Ericsson (publ) |
| 18491802 | SILICON CARBIDE SEMICONDUCTOR DEVICE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 18188496 | CONTACT CUT AND WRAP AROUND CONTACT | Non-Final OA | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 18390952 | GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL | Non-Final OA | Intel Corporation |
| 18516595 | SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP | Non-Final OA | Intel Corporation |
| 18333758 | INTEGRATED CIRCUIT DEVICE WITH MULTI-LENGTH GATE ELECTRODE | Non-Final OA | Intel Corporation |
| 18070361 | Circuit Systems And Methods Using Spacer Dies | Non-Final OA | Intel Corporation |
| 18533410 | Integrated Assemblies and Semiconductor Memory Devices | Non-Final OA | Micron Technology, Inc. |
| 18506245 | SEMICONDUCTOR DEVICE | Non-Final OA | Murata Manufacturing Co., Ltd. |
| 18505632 | GATE ISOLATION FEATURES | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18502297 | SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE VIA STRUCTURE | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18358522 | INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18184666 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18366073 | Gate Structure of Semiconductor Device and Method of Forming Same | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18361569 | BENT FIN DEVICES | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18124980 | ISOLATION STRUCTURES IN SEMICONDUCTOR DEVICES | Final Rejection | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 17818785 | Semiconductor Device and Method | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18494783 | SEMICONDUCTOR DEVICE STRUCTURE WITH VERTICAL TRANSISTOR OVER UNDERGROUND BIT LINE | Non-Final OA | Invention And Collaboration Laboratory Pte. Ltd. |
| 18208388 | TRANSISTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | Invention And Collaboration Laboratory Pte. Ltd. |
| 18065130 | Method for Forming a Semiconductor Device | Non-Final OA | IMEC VZW |
| 18164523 | METHOD FOR FORMING DIFFUSION BREAK STRUCTURE IN FIN FIELD EFFECT TRANSISTOR | Non-Final OA | Shanghai Huali Integrated Circuit Corporation |
| 17952916 | Self-Aligned Gate Contact Fin Field Effect Transistor and Method for Manufacturing the Same | Non-Final OA | Shanghai Huali Integrated Circuit Corporation |
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