Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2813
This examiner grants 78% of resolved cases
Examiner Latanya N. Crawford Eason works in Art Unit 2813 within Tech Center 2800. She has 932 resolved cases and an allowance rate of 78.4%. The median days to allowance for these cases is 987 days. The data also shows an interview lift of 0.4%. This 0.4% lift indicates that cases involving an interview reach allowance at a rate nearly identical to the 78.4% overall allowance rate. These figures provide a statistical overview of the prosecution environment for this examiner.
The 932 resolved cases in Tech Center 2800 establish the historical performance for Art Unit 2813. An allowance rate of 78.4% means that a majority of applications reached a successful conclusion. The median of 987 days to allowance represents the timeframe for the prosecution process. Because the interview lift is 0.4%, the data suggests that interviews have a minimal impact on the probability of allowance. These data points from 932 resolved cases offer a factual summary of the outcomes for applications assigned to Latanya N. Crawford Eason.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18390217 | IMAGE SENSOR | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18532504 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18489451 | SEMICONDUCTOR DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18769204 | MANUFACTURING METHOD OF DISPLAY SUBSTRATE, DISPLAY SUBSTRATE AND DISPLAY DEVICE | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18556672 | DISPLAY PANELS | Non-Final OA | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. |
| 17976949 | SUBSTRATE FOR LIGHT EMITTING ELEMENTS, LIGHT EMITTING DEVICE INCLUDING SUBSTRATE FOR LIGHT EMITTING ELEMENTS, AND METHOD OF PRODUCING SUBSTRATE FOR LIGHT EMITTING ELEMENTS | Non-Final OA | NICHIA CORPORATION |
| 17545467 | MAGNETIZATION ROTATION ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MANUFACTURING SPIN-ORBIT TORQUE WIRING | Final Rejection | TDK CORPORATION |
| 18547752 | METHOD TO IMPROVE THE PERFORMANCE OF GALLIUM-CONTAINING MICRON-SIZED LIGHT-EMITTING DEVICES | Non-Final OA | The Regents of the University of California |
| 18832792 | VERTICAL TRANSISTOR, LIGHT DETECTION APPARATUS, AND ELECTRONIC DEVICE | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18556417 | SENSOR DEVICE AND MANUFACTURING METHOD | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 17841513 | BACKSIDE ILLUMINATION TYPE SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD FOR BACKSIDE ILLUMINATION TYPE SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS AND ELECTRONIC EQUIPMENT | Final Rejection | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18278556 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR APPARATUS | Final Rejection | KYOCERA Corporation |
| 18547417 | COMPONENT HAVING STRUCTURED LEAD FRAME AND HOUSING BODY AND METHOD FOR PRODUCING THE COMPONENT | Non-Final OA | ams-OSRAM International GmbH |
| 18289849 | METHOD FOR PRODUCING A SILICON CARBIDE SUBSTRATE | Final Rejection | Hitachi Energy Ltd |
| 18402867 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18523007 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE | Non-Final OA | STMicroelectronics International N.V. |
| 18776346 | SEMICONDUCTOR ON INSULATOR HAVING A SEMICONDUCTOR LAYER WITH DIFFERENT THICKNESSES | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18761077 | SEMICONDUCTOR DEVICE AND A METHOD OF FABRICATING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18656884 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18526529 | METHODS FOR IMPROVING DEPTH LOADING IN TRANSISTORS | Non-Final OA | Taiwan Semiconductor Manufacturing Company, LTD. |
| 17982587 | MRAM DEVICE HAVING SELF-ALIGNED SHUNTING LAYER | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17861234 | MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18786724 | Conductive Features with Air Spacer and Method of Forming Same | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18780824 | Semiconductor Device and Manufacturing Method of Semiconductor Device | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18400819 | SELECTIVE BOTTOM-UP METAL FILL/CAP ON JUNCTION SILICIDE BY SELECTIVE METAL REMOVAL | Non-Final OA | Applied Materials, Inc. |
| 18788163 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | UNITED MICROELECTRONICS CORP. |
| 18659282 | SEMICONDUCTOR ON INSULATOR WAFER WITH CAVITY STRUCTURES | Non-Final OA | GlobalFoundries U.S. Inc. |
| 18397008 | ELECTROSTATIC DEVICE | Non-Final OA | GlobalFoundries Singapore Pte. Ltd. |
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