Tech Center 4100 • Art Units: 2898 4100
This examiner grants 90% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18464608 | SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18464348 | THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18214861 | INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 17742852 | SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18408102 | MULTILAYER ANTIREFLECTION COATINGS ON TEXTURED SURFACE FOR BACK ILLUMINATED SILICON PHOTOMULTIPLIER | Non-Final OA | Georgia Tech Research Corporation |
| 18743068 | HIGH-BANDWIDTH INTEGRATED CIRCUIT PACKAGING OF MEMORY AND LOGIC | Non-Final OA | QUALCOMM Incorporated |
| 17741621 | 3D Packaging Heterogeneous Area Array Interconnections | Non-Final OA | Avago Technologies International Sales Pte. Limited |
| 18082486 | THREE-DIMENSIONAL MEMORY AND FORMING METHOD THEREOF | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18834732 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18011658 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR EPITAXIAL SUBSTRATE, AND SEMICONDUCTOR EPITAXIAL SUBSTRATE | Non-Final OA | KYOCERA Corporation |
| 18562249 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE | Final Rejection | ams-OSRAM International GmbH |
| 18062034 | GATE-ALL-AROUND DEVICE WITHOUT DIELECTRIC INNER SPACER | Final Rejection | International Business Machines Corporation |
| 17958735 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | SK hynix Inc. |
| 17950740 | MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME | Non-Final OA | SK hynix Inc. |
| 18440348 | ASYMMETRIC TRANSISTOR DEVICES | Non-Final OA | Micron Technology, Inc. |
| 17848021 | MEMORY DEVICE INCLUDING HIGH-ASPECT-RATIO CONDUCTIVE CONTACTS | Final Rejection | Micron Technology, Inc. |
| 18403587 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18352708 | SOURCE/DRAIN FEATURES FOR STACKED MULTI-GATE DEVICE | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18323179 | DIODE-CONTAINING COMPONENT AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18150027 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17899865 | SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD OF MANUFACTURING THEREOF | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18440209 | GRAIN GROWTH OF SILICON BY METAL INDUCED CRYSTALLIZATION | Non-Final OA | Applied Materials, Inc. |
| 18512894 | LOW RESISTIVITY GAPFILL | Final Rejection | Applied Materials, Inc. |
| 17875535 | PATTERNING SCHEME TO IMPROVE EUV RESIST AND HARD MASK SELECTIVITY | Final Rejection | Applied Materials, Inc. |
| 18620222 | METHOD FOR SEMICONDUCTOR PROCESSING | Non-Final OA | Tokyo Electron Limited |
| 18611527 | PLASMA ASSISTED METAL OXIDE REDUCTION | Final Rejection | Tokyo Electron Limited |
| 18380345 | SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD OF MANUFACTURING THE SAME | Final Rejection | NANYA TECHNOLOGY CORPORATION |
| 18394182 | DISPLAY ELEMENT AND MANUFACTURING METHOD THEREOF | Final Rejection | AUO Corporation |
| 18435035 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME | Final Rejection | FUJI ELECTRIC CO., LTD. |
| 17714445 | BUMP STRUCTURE OF CHIP | Final Rejection | SITRONIX TECHNOLOGY CORP. |
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