Tech Center 2800 • Art Units: 2814 2815 2893
This examiner grants 68% of resolved cases
Erik J. Kielin, an examiner in Tech Center 2800 and Art Unit 2814, has resolved 642 cases. The allowance rate is 67.6 percent, and the median days to allowance is 865. These metrics suggest a moderate probability of success and a relatively efficient path to patent issuance, with about two-thirds of cases resulting in a grant.
The interview lift is 5.1 percent, showing a modest benefit from direct communication. While the 67.6 percent baseline allowance rate is solid and the 865-day timeline is efficient, the positive lift indicates that interviews can still be a useful tool for resolving minor issues. Practitioners can expect a professional prosecution process with a reasonable chance of success through standard procedures.
For practitioners, the strategy with Kielin should be to maintain the efficiency shown by the 865 median days to allowance. The 67.6 percent allowance rate is encouraging, and the 5.1 percent interview lift provides an additional option for success. Clear communication and thorough written responses are likely to result in a successful outcome in Art Unit 2814.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18429611 | INTEGRATED CIRCUIT DEVICES | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18397231 | ORGANIC LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18753757 | DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18442336 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME | Non-Final OA | Toshiba Electronic Devices & Storage Corporation |
| 18713288 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 18551643 | LIGHT-RECEIVING ELEMENT AND ELECTRONIC APPARATUS | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18438642 | SEMICONDUCTOR BACKSIDE CONTACT SPACER ENGINEERING | Non-Final OA | International Business Machines Corporation |
| 18465376 | CIRCULAR-SHAPED RESISTOR | Non-Final OA | International Business Machines Corporation |
| 18244175 | SEMICONDUCTOR POWER MODULE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR POWER MODULE FOR A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE | Non-Final OA | Hitachi Energy Ltd |
| 18740673 | COATING PROCESSING APPARATUS AND METHOD FOR FORMING COATING FILM | Non-Final OA | Kioxia Corporation |
| 18605999 | MEMORY DEVICE | Final Rejection | Kioxia Corporation |
| 18066206 | Integrated circuit FLUID sensor | Final Rejection | Texas Instruments Incorporated |
| 18719575 | SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE | Non-Final OA | DENSO CORPORATION |
| 18663014 | LOW RESISTIVITY FILMS CONTAINING MOLYBDENUM | Non-Final OA | Lam Research Corporation |
| 18006552 | LOW CEILING TEMPERATURE HOMOPOLYMERS AS SACRIFICIAL PROTECTION LAYERS FOR ENVIRONMENTALLY SENSITIVE SUBSTRATES | Non-Final OA | Lam Research Corporation |
| 18757887 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE | Non-Final OA | STMicroelectronics International N.V. |
| 18644231 | INTERCONNECT STRUCTURE AND METHODS OF FORMING THE SAME | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18588069 | INTEGRATED CIRCUIT (IC) STRUCTURES WITH THERMAL VIAS AND HEAT SPREADER LAYERS | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18177144 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17887122 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18790273 | CARBON-BASED LINER TO REDUCE CONTACT RESISTANCE | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18766246 | COAXIAL THROUGH VIA WITH NOVEL HIGH ISOLATION CROSS COUPLING METHOD FOR 3D INTEGRATED CIRCUITS | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18459524 | SELECTIVE CAPPING FOR GATE-ALL-AROUND FIELD EFFECT TRANSISTORS | Final Rejection | Applied Materials, Inc. |
| 18107326 | LOW STRESS TUNGSTEN LAYER DEPOSITION | Final Rejection | Applied Materials, Inc. |
| 18105340 | SEMICONDUCTOR DEVICE STRUCTURE WITH DIELECTRIC LINER PORTIONS AND METHOD FOR PREPARING THE SAME | Final Rejection | NANYA TECHNOLOGY CORPORATION |
| 18592521 | SEMICONDUCTOR PACKAGE FOR LIQUID IMMERSION COOLING AND METHOD OF FORMING THE SAME | Non-Final OA | ETRON TECHNOLOGY, INC. |
| 18364651 | Wafer Edge Protection Film Forming Method, Patterning Process, And Composition For Forming Wafer Edge Protection Film | Non-Final OA | SHIN-ETSU CHEMICAL CO., LTD. |
| 18149200 | BACK GATE ION-SENSITIVE FIELD EFFECT TRANSISTOR SENSING WITH STACKED HIGH-K NANOSHEETS | Final Rejection | GlobalFoundries Singapore Pte. Ltd. |
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