Prosecution Insights
Prosecution Insights
Tech Center 4100 • Art Units: 2176 2824 2827 4100
This examiner grants 89% of resolved cases
Christopher Lane Reece is an examiner in Tech Center 4100 and Art Unit 2176. He has 35 resolved cases in his record. The allowance rate for these cases is 88.6 percent. This 88.6 percent rate provides a baseline for applicants to understand the frequency of patent grants in his docket. With 35 resolved cases, the data offers a perspective on his examination history.
The interview lift is 15.0 percent. This 15.0 percent figure is lower than the 88.6 percent allowance rate, but it still indicates the increase in the likelihood of allowance when an interview is conducted. Practitioners in Art Unit 2176 can use this lift to inform their strategy. The median days to allowance is 866. This 866-day period represents the time typically required to reach a grant. Stakeholders can use the 866-day metric and the 35 resolved cases to plan their prosecution timelines in Tech Center 4100.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19012628 | MEMORY DEVICE PERFORMING INFORMATION DATA READ OPERATION AND INFORMATION DATA READ METHOD THEREOF | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18925340 | ADVANCED CLOCK SIGNAL DRIVERS AND MEMORY SYSTEMS INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18793256 | RESISTIVE MEMORY DEVICE CAPABLE OF INCREASING MEMORY CAPACITY | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18679809 | SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18678401 | MEMORY DEVICE AND METHOD OF OPERATING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18779378 | MEMORY BUILT-IN-SELF-TEST (MBIST) WITH ENHANCED FAULT COUNTER | Non-Final OA | NXP USA, Inc. |
| 17843211 | SPLIT FOOTER TOPOLOGY TO IMPROVE VMIN AND LEAKAGE POWER FOR REGISTER FILE AND READ ONLY MEMORY DESIGNS | Final Rejection | Intel Corporation |
| 19015036 | Program Operations in Memory Devices | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18614163 | PAGE BUFFERS AND OPERATION METHODS THEREOF, AND MEMORY DEVICES AND MEMORY SYSTEMS | Final Rejection | Yangtze Memory Technologies Co., Ltd. |
| 18591856 | SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM | Final Rejection | Kioxia Corporation |
| 18785479 | CORRECTIVE PROGRAM CONVERGENCE ASSOCIATED WITH MEMORY CELLS OF A MEMORY SUB-SYSTEM | Non-Final OA | MICRON TECHNOLOGY, INC. |
| 18738644 | PROCESSING-IN-MEMORY OPERATIONS, AND RELATED APPARATUSES, SYSTEMS, AND METHODS | Non-Final OA | Micron Technology, Inc. |
| 18624570 | ALTERNATING BITLINE PAGE MAPPING WITH LINEAR WORDLINE RAMPING DURING A READ OPERATION | Non-Final OA | Micron Technology, Inc. |
| 18417899 | COMPLEX PAGE ACCESS IN MEMORY DEVICES | Non-Final OA | Micron Technology, Inc. |
| 19011147 | SRAM POWER-UP RANDOM NUMBER GENERATOR | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18670302 | SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD | Final Rejection | Nuvoton Technology Corporation Japan |
| 18943434 | MULTI-PORT MEMORY DEVICE WITH BUILT-IN CONFIGURABLE LOGIC BLOCK TO PERFORM A PARALLEL COMPUTING OPERATION | Final Rejection | Rambus Inc. |
| 18702810 | 3D FLASH MEMORY AND OPERATION METHOD THEREOF | Non-Final OA | IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) |
| 18510978 | ACHIEVING DIFFERENT HIGH VOLTAGES ON INDIVIDUAL BITLINES OF A MEMORY DEVICE | Non-Final OA | Sandisk Technologies, Inc. |
| 18231629 | ERASE TECHNIQUES USING ANALOG BITSCAN IN A MEMORY DEVICE | Final Rejection | Sandisk Technologies, Inc. |
| 18762131 | Data Storage System Using a Light Valve System | Non-Final OA | Seurat Technologies, Inc. |
| 18005756 | SPIN ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY CELL, SPIN ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY ARRAY, AND METHOD FOR CALCULATING HAMMING DISTANCE | Non-Final OA | INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES |
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