Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2825
This examiner grants 89% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18725991 | METHOD FOR OPERATING FERROELECTRIC-BASED THREE-DIMENSIONAL FLASH MEMORY INCLUDING DATA STORAGE PATTERN | Final Rejection | Samsung Electronics Co., Ltd. |
| 18758646 | SEMICONDUCTOR MEMORY DEVICE AND SELF-REFRESH METHOD THEREOF | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18618456 | START-UP CIRCUIT FOR BANDGAP REFERENCES IN A NAND FLASH | Final Rejection | Samsung Electronics Co., Ltd. |
| 18408126 | STORAGE DEVICE AND METHOD OF OPERATING THE SAME | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18534220 | MEMORY DEVICE INCLUDING VERTICAL CHANNEL TRANSISTOR AND ELECTRONIC DEVICE INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18529365 | MEMORY DEVICE AND SYSTEM HAVING MULTIPLE PHYSICAL INTERFACES | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18086639 | AUTONOMOUS DIMM WRITE LEVELING TRAINING | Non-Final OA | Intel Corporation |
| 18521382 | WEIGHTED WEAR LEVELING FOR IMPROVING UNIFORMITY | Non-Final OA | Micron Technology, Inc. |
| 18888253 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | KIOXIA CORPORATION |
| 18783018 | NON-VOLATILE MEMORY BASED COMPUTE-IN-MEMORY CELL | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18760660 | MEMORY DEVICES WITH DUAL-SIDE DISCHARGE AND METHODS FOR OPERATING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18337267 | STACKED TRANSISTORS IN MEMORY CIRCUIT AND METHOD OF OPERATING SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18411412 | ELECTRONIC SYSTEM RELATED TO DETECTING A RESULT OF A RUPTURE OPERATION | Non-Final OA | SK hynix Inc. |
| 18357883 | MEMORY DEVICE, MEMORY SYSTEM, AND OPERATING METHOD THEREOF FOR REDUCING A PROGRAMMING DURATION | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18895326 | METHOD AND DEVICE FOR PARALLEL ANALOG IN-MEMORY COMPUTING | Non-Final OA | NANJING UNIVERSITY |
| 18776359 | HOLE PRE-CHARGE FROM BITLINE SIDE TO ENABLE FULL REVERSE ORDER PROGRAM SUB-BLOCK MODE | Non-Final OA | Sandisk Technologies, Inc. |
| 18756731 | APPARATUS AND METHODS FOR AMPLIFIER CIRCUITS FOR READING MRAM MEMORY CELLS | Non-Final OA | Sandisk Technologies, Inc. |
| 18601389 | NON-VOLATILE MEMORY WITH PROGRAM-VERIFY AT COMMON VOLTAGE | Final Rejection | Sandisk Technologies, Inc. |
| 18663366 | NON-VOLATILE MEMORY WITH GROUPED BIT LINES FOR SENSING | Non-Final OA | SanDisk Technologies LLC |
| 17893071 | Testing Circuitry And Methods For Analog Neural Memory In Artificial Neural Network | Non-Final OA | Silicon Storage Technology, Inc. |
| 18749166 | CROSSBAR CIRCUITS FOR PERFORMING CONVOLUTION OPERATIONS | Non-Final OA | TetraMem Inc. |
| 18267797 | ELECTRIC CIRCUIT ASSEMBLY COMPRISING A FERROELECTRIC FIELD EFFECT TRANSISTOR, AND MEMORY CELL | Non-Final OA | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. |
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