Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2825
This examiner grants 89% of resolved cases
Alfredo Bermudez Lozada, working in Tech Center 2800 and Art Unit 2825, has an allowance rate of 89.4 percent across 539 resolved cases. This rate suggests the path to grant for applications. The median days to allowance is 770, indicating the prosecution cycle for cases in this art unit.
The interview lift is 2.0 percent. Given the baseline allowance rate of 89.4 percent, interviews offer a small statistical advantage in securing an allowance. With 539 resolved cases as a foundation, the data implies that the 770 day median timeline is a primary factor for applicants. Practitioners can expect a high probability of success based on the 89.4 percent allowance rate without heavy reliance on the 2.0 percent lift provided by interviews, making the written record a key focus. The allowance rate is an indicator of success in Art Unit 2825.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 19023113 | CHARGE PUMP SYSTEM AND OPERATING METHOD THEREOF, AND MEMORY DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18725991 | METHOD FOR OPERATING FERROELECTRIC-BASED THREE-DIMENSIONAL FLASH MEMORY INCLUDING DATA STORAGE PATTERN | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18534220 | MEMORY DEVICE INCLUDING VERTICAL CHANNEL TRANSISTOR AND ELECTRONIC DEVICE INCLUDING THE SAME | Final Rejection | Samsung Electronics Co., Ltd. |
| 18529365 | MEMORY DEVICE AND SYSTEM HAVING MULTIPLE PHYSICAL INTERFACES | Final Rejection | Samsung Electronics Co., Ltd. |
| 18216424 | LEAKAGE COMPENSATED DYNAMIC LATCH | Non-Final OA | Intel Corporation |
| 19012049 | MEMORY DEVICE, TRIM REGISTER, MEMORY SYSTEM, AND ELECTRONIC APPARATUS | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18830329 | SYSTEMS, METHODS AND MEDIA OF OPTIMIZATION OF TEMPORARY READ ERRORS IN 3D NAND MEMORY DEVICES | Final Rejection | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 19103314 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SEMICONDUCTOR DEVICE | Non-Final OA | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 19075664 | MAGNETIC MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18411348 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | SK hynix Inc. |
| 18411412 | ELECTRONIC SYSTEM RELATED TO DETECTING A RESULT OF A RUPTURE OPERATION | Final Rejection | SK hynix Inc. |
| 18193474 | MEMORY DEVICE FOR PERFORMING PROGRAM OPERATION AND METHOD OF OPERATING THE SAME | Final Rejection | SK hynix Inc. |
| 19067386 | ADJUSTMENT OF PROGRAM VERIFY TARGETS CORRESPONDING TO A LAST PROGRAMMING DISTRIBUTION AND A PROGRAMMING DISTRIBUTION ADJACENT TO AN INITIAL PROGRAMMING DISTRIBUTION | Non-Final OA | Micron Technology, Inc. |
| 19047507 | SENSE AMPLIFIER CIRCUITRY AND RELATED APPARATUSES AND COMPUTING SYSTEMS | Non-Final OA | Micron Technology, Inc. |
| 19028149 | TRIM SETTING DETERMINATION FOR A MEMORY DEVICE | Non-Final OA | Micron Technology, Inc. |
| 19023916 | INDEPENDENT SENSING TIMES | Non-Final OA | Micron Technology, Inc. |
| 18923616 | APPARATUS WITH MULTI-MODE-REGISTER READ AND WRITE COMMANDS | Non-Final OA | Micron Technology, Inc. |
| 18780167 | GANGED SINGLE LEVEL CELL VERIFY IN A MEMORY DEVICE | Non-Final OA | Micron Technology, Inc. |
| 18521382 | WEIGHTED WEAR LEVELING FOR IMPROVING UNIFORMITY | Final Rejection | Micron Technology, Inc. |
| 18337267 | STACKED TRANSISTORS IN MEMORY CIRCUIT AND METHOD OF OPERATING SAME | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18972441 | 3D DRAM WITH BIT LINE SELECT AND PRE-CHARGE TRANSISTORS | Non-Final OA | Katholieke Universiteit Leuven |
| 18749166 | CROSSBAR CIRCUITS FOR PERFORMING CONVOLUTION OPERATIONS | Final Rejection | TetraMem Inc. |
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