Tech Center 2800 • Art Units: 2817
This examiner grants 80% of resolved cases
Examiner DA WEI LEE is assigned to Tech Center 2800 and Art Unit 2817. The examiner has reached a final resolution on 46 cases. The data shows an allowance rate of 80.4 percent, which represents the proportion of applications that result in a patent grant rather than an abandonment. This rate provides a primary indicator of the likelihood of success for an application assigned to this examiner.
The median days to allowance for this examiner is 1292. This figure represents the middle point of the time distribution for applications that successfully result in a patent grant. A median of 1292 days offers a specific timeline for practitioners to consider when managing client expectations and filing strategies. Understanding this duration is essential for navigating the procedural requirements of Art Unit 2817.
The interview lift is 15.4 percent. This figure quantifies the change in the probability of allowance when an interview is conducted during the prosecution process. A lift of 15.4 percent suggests that verbal communication with the examiner may influence the final outcome of a case. For the 46 resolved cases analyzed, this statistic serves as a tool for determining whether to request a formal interview in Tech Center 2800.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18188311 | THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 17834240 | THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 17830488 | SEMICONDUCTOR PACKAGE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18558302 | DISPLAY SUBSTRATE AND DISPLAY APPARATUS | Non-Final OA | BOE TECHNOLOGY GROUP CO., LTD. |
| 18258380 | METHOD FOR PRODUCING A III-N MATERIAL-BASED LAYER | Non-Final OA | COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
| 18757034 | STACKED DIE NETWORK INTERFACE CONTROLLER CIRCUITRY | Non-Final OA | Altera Corporation |
| 18115807 | 3D MEMORY DEVICE WITH A DRAM CHIP | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18735435 | SEMICONDUCTOR MANUFACTURING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS, AND SEMICONDUCTOR APPARATUS | Non-Final OA | Mitsubishi Electric Corporation |
| 18550281 | SEMICONDUCTOR DEVICE AND IMAGING DEVICE | Final Rejection | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18347404 | SEMICONDUCTOR DEVICE INCLUDING METAL INTERCONNECT STRUCTURES THAT CONTAIN SELECTIVELY-GROWN DIELECTRIC SPACERS AND METHODS FOR FORMING THE SAME | Final Rejection | WESTERN DIGITAL TECHNOLOGIES, INC., |
| 18620887 | SEMICONDUCTOR DEVICES WITH ALTERNATING INSULATING LAYERS AND METHODS OF FABRICATION THEREOF | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 18308026 | DIELECTRIC GAS SPACER FORMATION FOR REDUCING PARASITIC CAPACITANCE IN A TRANSISTOR INCLUDING NANOSHEET STRUCTURES | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18050753 | THIN-FILM TRANSISTOR HAVING VERTICAL STRUCTURE AND ELECTRONIC DEVICE | Non-Final OA | WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. |
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