Tech Center 2800 • Art Units: 2812
This examiner grants 86% of resolved cases
Xiaoming Liu has resolved 609 cases in Tech Center 2800 and Art Unit 2812. The examiner's allowance rate is 86.5 percent, which serves as a primary indicator of prosecution success. Applicants typically experience a median of 823 days to allowance under this examiner's supervision. This 823-day figure is a metric for planning the timing of patent filings and responses. The 86.5 percent rate provides a baseline for the likelihood of a grant for cases reaching a final resolution.
The interview lift of 10.7 percent provides a measurable change in the probability of allowance for those who engage in examiner interviews. This lift is calculated relative to the 86.5 percent baseline allowance rate. The data suggests that verbal discussion can be a tool for resolving remaining issues in the 609 resolved cases. Practitioners should factor the 823-day median pendency into their decision to use an interview. These metrics offer a consistent view of the prosecution environment in Art Unit 2812.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18596664 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME | Non-Final OA | TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION |
| 18755387 | INTERPOSER INCLUDING LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING INTERPOSER INCLUDING LIGHT EMITTING DIODE, AND METHOD FOR INSPECTING LIGHT EMITTING DIODE | Non-Final OA | LG Display Co., Ltd. |
| 18423119 | ORGANIC LIGHT EMITTING ELEMENT | Final Rejection | CANON KABUSHIKI KAISHA |
| 17979849 | SEMICONDUCTOR SUBSTRATE AND ELECTRICAL INSPECTION METHOD | Final Rejection | CANON KABUSHIKI KAISHA |
| 18290289 | ENHANCED I/O SEMICONDUCTOR CHIP PACKAGE AND COOLING ASSEMBLY HAVING SIDE I/OS | Final Rejection | Intel Corporation |
| 18216525 | THROUGH GLASS VIAS WITH COMPLIANT LAYER FOR INTEGRATED CIRCUIT DEVICE PACKAGES | Non-Final OA | Intel Corporation |
| 18212382 | INTEGRATED CIRCUIT STRUCTURE WITH DEEP VIA BAR ISOLATION | Non-Final OA | Intel Corporation |
| 18338176 | DIELECTRIC MATERIAL AND A MOLD COMPOUND WITH DIFFERENT DIELECTRIC CONSTANTS COUPLED TO A DIE THAT INCLUDES INTEGRATED CIRCUITRY | Non-Final OA | Intel Corporation |
| 18723662 | ELECTRONIC DEVICE | Non-Final OA | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 18643589 | POWER MODULE STRUCTURE | Non-Final OA | Delta Electronics, Inc. |
| 18631011 | BACKSIDE GATE TIE DOWN THROUGH BACKSIDE POWER BAR | Non-Final OA | International Business Machines Corporation |
| 18720278 | ELECTRONICS MODULE COMPRISING A PULSATING HEAT PIPE WITH A CHANNEL STRUCTURE | Non-Final OA | Siemens Aktiengesellschaft |
| 18661044 | Method for Attaching Metallic Bodies to Thin Semiconductor Dies at Wafer Level | Non-Final OA | Infineon Technologies AG |
| 18126729 | MULTI-CHANNEL HIGH ELECTRON MOBILITY TRANSISTOR WITH DOPED GATE FINS | Non-Final OA | Infineon Technologies Austria AG |
| 18584470 | MEMORY DEVICES HAVING ADJACENT MEMORY CELLS WITH MITIGATED DISTURB RISK | Non-Final OA | Micron Technology, Inc. |
| 18590175 | Diffusion Barrier Layers in Semiconductor Devices | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18740864 | APPARATUS FORMED FROM ELECTRONIC COMPONENTS HAVING DIFFERENT RESPECTIVE THICKNESSES AND METHODS OF FORMING AN APPARATUS FROM ELECTRONIC COMPONENTS HAVING DIFFERENT RESPECTIVE THICKNESSES | Non-Final OA | Microchip Technology Incorporated |
| 18624655 | PLASMA GENERATING DEVICE, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | Kokusai Electric Corporation |
| 18443016 | FIELD EFFECT TRANSISTOR | Non-Final OA | Skyworks Solutions, Inc. |
| 18125655 | SEMICONDUCTOR DEVICES WITH INTEGRATED TEST AREAS | Non-Final OA | Wolfspeed, Inc. |
| 18428358 | INSERT-MOLDED ARTICLE AND METHOD FOR MANUFACTURING INSERT-MOLDED ARTICLE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
| 18378235 | Method and Apparatus for Prevention, Cessation, Detection, and Monitoring of Cracks in Substrates | Final Rejection | Chipletz, Inc. |
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