Tech Center 4100 • Art Units: 2822 2898 4100
This examiner grants 77% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18431190 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18233486 | SEMICONDUCTOR CHIP SPLITTING METHOD USING A LASER AND SEMICONDUCTOR CHIP SPLIT BY THE SAME | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18822954 | METHOD FOR SINGULATING A SEMICONDUCTOR COMPONENT HAVING A PN JUNCTION AND SEMICONDUCTOR COMPONENT HAVING A PN JUNCTION | Non-Final OA | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. |
| 18420341 | DISPLAY APPARATUS AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | LG Display Co., Ltd. |
| 18531070 | POWER MODULE FOR A VEHICLE | Non-Final OA | Robert Bosch GmbH |
| 17987378 | APPARATUS AND METHOD FOR MANUFACTURING DISPLAY DEVICE | Final Rejection | Samsung Display Co., LTD. |
| 17632340 | Display Device and Electronic Device | Final Rejection | Semiconductor Energy Laboratory Co., Ltd. |
| 18093477 | THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR ARRAY, AND METHOD OF PRODUCING THIN-FILM TRANSISTOR | Final Rejection | TOPPAN Inc. |
| 18002525 | Method for Manufacturing Semiconductor Device | Non-Final OA | NTT, Inc. |
| 17768709 | Optical Communication Element | Non-Final OA | NTT, Inc. |
| 18087811 | METHOD OF MANUFACTURING SEMICONDUCTOR CHIP INCLUDING FORMING DICING GROOVES AND SEMICONDUCTOR DEVICE | Final Rejection | SK hynix Inc |
| 18073931 | METHOD OF MANUFACTURING SEMICONDUCTOR CHIP INCLUDING DICING SUBSTRATE | Non-Final OA | SK hynix Inc. |
| 18060305 | LASER DICING TO CONTROL SPLASH | Final Rejection | TEXAS INSTRUMENTS INCORPORATED |
| 18425352 | SEMICONDUCTOR STRUCTURE | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18150256 | INTEGRATED CIRCUIT PACKAGES AND METHODS | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18110714 | DISPLAY MODULE AND METHOD FOR MANUFACTURING SAME | Final Rejection | RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY |
| 18132324 | PROCESSES AND APPLICATIONS FOR CATALYST INFLUENCED CHEMICAL ETCHING | Non-Final OA | Board of Regents, The University of Texas System |
| 18010456 | PROCESSES AND APPLICATIONS FOR CATALYST INFLUENCED CHEMICAL ETCHING | Final Rejection | Board of Regents, The University of Texas System |
| 17946471 | WAFER, ELECTRONIC COMPONENT AND METHOD USING LINED AND CLOSED SEPARATION TRENCH | Non-Final OA | Infineon Technologies AG |
| 17879460 | Technique for Forming Cubic Silicon Carbide and Heterojunction Silicon Carbide Device | Final Rejection | Infineon Technologies AG |
| 18353222 | PROCESSING METHOD OF WORKPIECE | Non-Final OA | DISCO CORPORATION |
| 18178794 | CHIP MANUFACTURING METHOD | Non-Final OA | DISCO CORPORATION |
| 18168827 | WAFER PROCESSING METHOD | Non-Final OA | DISCO CORPORATION |
| 18755686 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THEREOF | Non-Final OA | NANYA TECHNOLOGY CORPORATION |
| 18204398 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Final Rejection | UNITED MICROELECTRONICS CORP. |
| 18444221 | PRE-STACKING MECHANICAL STRENGTH ENHANCEMENT OF POWER DEVICE STRUCTURES | Non-Final OA | SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
| 18490923 | PLASMA-SINGULATED, CONTAMINANT-REDUCED SEMICONDUCTOR DIE | Non-Final OA | SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
| 18415955 | STRUCTURE WITH TWO WORK FUNCTION METALS OVER CONDUCTIVE BRIDGE, AND METHOD TO FORM SAME | Non-Final OA | GlobalFoundries U.S. Inc. |
| 18237195 | TRANSISTOR WITH THERMAL PLUG | Final Rejection | GlobalFoundries U.S. Inc. |
IP Author analyzes examiner patterns and generates tailored response strategies with the highest chance of allowance.
Build Your Strategy