Tech Center 2800 • Art Units: 1737 2891 2893 2896
This examiner grants 77% of resolved cases
Matthew L. Reames serves as an examiner in Tech Center 2800 and Art Unit 1737. He has a total of 1107 resolved cases. The allowance rate for these cases is 77.1 percent. This 77.1 percent rate indicates the frequency at which applications reach a grant under his review. With 1107 resolved cases, the profile provides a specific look at the outcomes in this docket.
The interview lift is 18.0 percent. This 18.0 percent figure is lower than the 77.1 percent allowance rate, suggesting that interviews are one of several factors in the prosecution process. Practitioners in Art Unit 1737 may use this 18.0 percent lift to evaluate the impact of direct communication. The median days to allowance is 996. This 996-day duration is the typical timeframe for successful applications. The 996-day metric, combined with the 1107 resolved cases, helps stakeholders understand the pendency and probability of success in Tech Center 2800.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18781730 | SEMICONDUCTOR DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18660712 | SEMICONDUCTOR DEVICE | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18419993 | LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF | Non-Final OA | TOYODA GOSEI CO., LTD. |
| 18692796 | DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF | Non-Final OA | BOE Technology Group Co., Ltd. |
| 18734281 | DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE | Non-Final OA | Samsung Display Co., LTD. |
| 18785422 | DISPLAY PANEL AND DISPLAY DEVICE | Non-Final OA | LG Display Co., Ltd. |
| 18784447 | DISPLAY DEVICE | Non-Final OA | LG Display Co., Ltd. |
| 18430982 | Chip Stacked Structure and Manufacturing Method Thereof, Chip Package Structure, and Electronic Device | Final Rejection | Huawei Technologies Co., Ltd. |
| 18403990 | METHOD FOR PRODUCING A FIELD-EFFECT TRANSISTOR | Final Rejection | Robert Bosch GmbH |
| 18800342 | IMAGE SENSOR | Non-Final OA | Commissariat à I'Énergie Atomique et aux Énergies Alternatives |
| 18522042 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD | Final Rejection | CANON KABUSHIKI KAISHA |
| 18633667 | INTEGRATED CIRCUIT (IC) PACKAGE INCLUDING TWO SUBSTRATES AND VERTICAL INTERCONNECTS COUPLING THE TWO SUBSTRATES, THE VERTICAL INTERCONNECTS COMPRISING A METAL BALL AND METAL PIN COMBINATION TO ADDRESS AN INCREASED DISTANCE BETWEEN SUBSTRATES | Final Rejection | QUALCOMM Incorporated |
| 18745354 | SEMICONDUCTOR DEVICES AND FABRICATING METHODS THEREOF | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18671420 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18710278 | METHOD FOR PRODUCING A PLURALITY OF RADIATION-EMITTING SEMICONDUCTOR CHIPS, AND RADIATION-EMITTING SEMICONDUCTOR CHIP | Non-Final OA | ams-OSRAM International GmbH |
| 18611681 | SEMICONDUCTOR PACKAGE HAVING MOISTURE PASSING GAP IN POWER OR GROUND METAL PLANE OF A PACKAGE SUBSTRATE | Final Rejection | MEDIATEK INC. |
| 18736110 | PARASITIC CAPACITENCE REDUCTION IN STACKED TRANSISTOR | Non-Final OA | International Business Machines Corporation |
| 18447412 | CONTROLLING CROSS-TALK AND BUS LOSSES IN RABI-DRIVEN SUPERCONDUCTING QUBITS WITH MULTI-MODE INTERCONNECTS | Non-Final OA | International Business Machines Corporation |
| 18664301 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18643789 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18596404 | 3D IC POWER GRID | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18432333 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18406246 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
| 18346267 | METHOD AND SYSTEM OF ARRANGING PATTERNS OF SEMICONDUCTOR DEVICE | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
| 18807152 | TRANSITION METAL CONTAINING CONTACT WITH REDUCED CONTACT RESISTIVITY | Non-Final OA | Applied Materials, Inc. |
| 18630142 | 3D NAND CELLS WITH ENHANCED ERASE SPEED THROUGH DIPOLE ENGINEERING AND METHODS OF MAKING THE SAME | Non-Final OA | Applied Materials, Inc. |
| 18481715 | METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS | Final Rejection | Kokusai Electric Corporation |
| 18032720 | OPTICAL SENSOR HAVING 2D-3D HETEROJUNCTION STRUCTURE AND MANUFACTURING METHOD THEREOF | Non-Final OA | AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION |
| 18570870 | METHOD FOR PRODUCING A SOLID-STATE COMPONENT, SOLID-STATE COMPONENT, QUANTUM COMPONENT AND APPARATUS FOR PRODUCING A SOLID-STATE COMPONENT | Non-Final OA | MAX-PLANCK-GESELLSCHAFT ZUR FÖRDERUNG DER WISSENSCHAFTEN E.V. |
| 18641881 | HIGH-VOLTAGE METAL GATE DEVICE AND PROCESS METHOD FOR THE SAME | Non-Final OA | Shanghai Huali Integrated Circuit Corporation |
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