Prosecution Insights
Last updated: August 14, 2026

Shanghai Huali Microelectronics Corporation

19 pending office actions • 12 art units • 19 examiners • 0 of 19 (0%) have an AI response strategy ready • 55 patents granted in the last 365 days

Portfolio Summary

19
Total Pending OAs
9
Non-Final OAs
1
Final Rejections
9
Advisory / Quayle

Response Deadline Pressure

Based on the USPTO statutory response window for each pending office action. 6 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.

6
Overdue
0
Due this week
0
Due this month
0
Due in next 60 days
0
Due later

Deadline Fire Line

Every pending office action with a known statutory deadline, placed on a days-until-due axis. Dots left of Today are overdue; the further right, the more runway. Cases that share a deadline window stack vertically. 6 of the docket's apps have a known mailing date.

-30dToday30d60d90d120d
Overdue (6)

Case Difficulty Mix

Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.

6
Hard (32%)
12
Medium (63%)
1
Easy (5%)
0
Unknown (0%)

Rejection Statute Mix

BucketCases
§101 only1 (5%)
§103 only12 (63%)
§112 only1 (5%)
Multi-statute (no §101)5 (26%)

Industry Mix

How the docket's pending cases split across USPTO tech-center bands.

2
Life Sciences
11% of docket
0
Information Tech
0% of docket
0
Communications
0% of docket
12
Semiconductors
63% of docket
0
Mechanical / Eng
0% of docket
5
Business / Other
26% of docket

Time-on-OA Estimate

Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.

190 h
Manual time on pending OAs
38 h
Time saved (low, 20%)
66 h
Time saved (mid, 35%)
1.7 wks
FTE-weeks freed (mid)

Top Examiners on this docket

ExaminerApps on this docketAllow rateInterview lift
TRAN, DZUNG 1 83.5% +5.5%
LU, JIONG-PING 1 83.5% +7.9%
LUONG, DUY HAN 1 94.7% +8.3%
MANG, LAL C 1 76.2% +16.2%
REAMES, MATTHEW L 1 77.0% +18.0%
PETERSON, ERIK T 1 77.2% +11.2%
HANEY, NOAH JAMES 1 79.6% +30.8%
WEGNER, AARON MICHAEL 1 72.2% -1.3%
LAOBAK, ANDREW KEELAN 1 76.6% +30.8%
BERMAN, JASON 1 63.7% +21.6%

Quick Wins (3)

Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 3 ordered by deadline are shown.

App #TitleExaminerDue in
18783249 METHOD FOR IMPROVING PERFORMANCE OF MOS DEVICE TRAN, DZUNG
18778752 POLYSILICON GATE ETCH METHOD LU, JIONG-PING
18744498 THREE-PORT SRAM CIRCUIT LUONG, DUY HAN

Hard Cases (6)

Multi-statute / §101-driven matters, or cases in front of an examiner with an allow rate under 30%. The top 6 ordered by deadline are shown.

App #TitleExaminerDue in
17877324 Method for Manufacturing Integrated Metal Resistance Layer PRIDEMORE, NATHAN ANDREW 1d overdue
18644604 METHOD FOR REDUCING MEASUREMENT ERRORS IN CRITICAL PATTERN DIMENSIONS OF POLYCRYSTAL LAYERS MANG, LAL C
18614346 METHOD FOR MANUFACTURING ALUMINUM PAD OF SEMICONDUCTOR CHIP PETERSON, ERIK T
18426052 APPARATUS FOR FILTERING LIGHTING SOURCE OF SEMICONDUCTOR APPEARANCE DETECTION DEVICE HANEY, NOAH JAMES
18154154 OPC Method LIN, ARIC
17896286 Method for Improving Stability of Etching Rate of Etching Chamber KIM, JAHAE

Interview Candidates (6)

Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 6 ordered by deadline are shown.

App #TitleExaminerDue in
18125877 Reaction Device for Improving Epitaxial Growth Uniformity BERMAN, JASON 60d overdue
18129433 METHOD FOR IMPROVING HEIGHT DIFFERENCE BETWEEN GATES LAOBAK, ANDREW KEELAN 26d overdue
18644604 METHOD FOR REDUCING MEASUREMENT ERRORS IN CRITICAL PATTERN DIMENSIONS OF POLYCRYSTAL LAYERS MANG, LAL C
18641881 HIGH-VOLTAGE METAL GATE DEVICE AND PROCESS METHOD FOR THE SAME REAMES, MATTHEW L
18614346 METHOD FOR MANUFACTURING ALUMINUM PAD OF SEMICONDUCTOR CHIP PETERSON, ERIK T
18426052 APPARATUS FOR FILTERING LIGHTING SOURCE OF SEMICONDUCTOR APPEARANCE DETECTION DEVICE HANEY, NOAH JAMES

Top Art Units

Art UnitApps
2897 3
2825 1
2827 1
1713 1
1794 1
2817 1
2818 1
2851 1
2813 1
2898 1

Pending Office Actions

App #TitleExaminerArt UnitStatutesStatusDue inAIFiled
18783249 METHOD FOR IMPROVING PERFORMANCE OF MOS DEVICE TRAN, DZUNG §103 Non-Final OA Pending Jul 24, 2024
18778752 POLYSILICON GATE ETCH METHOD LU, JIONG-PING §103 Non-Final OA Pending Jul 19, 2024
18744498 THREE-PORT SRAM CIRCUIT LUONG, DUY HAN 2825 §103 Non-Final OA Pending Jun 14, 2024
18644604 METHOD FOR REDUCING MEASUREMENT ERRORS IN CRITICAL PATTERN DIMENSIONS OF POLYCRYSTAL LAYERS MANG, LAL C §101 Non-Final OA Pending Apr 24, 2024
18641881 HIGH-VOLTAGE METAL GATE DEVICE AND PROCESS METHOD FOR THE SAME REAMES, MATTHEW L §112 Non-Final OA Pending Apr 22, 2024
18614346 METHOD FOR MANUFACTURING ALUMINUM PAD OF SEMICONDUCTOR CHIP PETERSON, ERIK T §102§103§112 Non-Final OA Pending Mar 22, 2024
18426052 APPARATUS FOR FILTERING LIGHTING SOURCE OF SEMICONDUCTOR APPEARANCE DETECTION DEVICE HANEY, NOAH JAMES 2827 §103§112 Non-Final OA Pending Jan 29, 2024
18465011 METHOD FOR MEASURING THICKNESS OF SILICON EPITAXIAL LAYER WEGNER, AARON MICHAEL 2897 §103 Non-Final OA Pending Sep 11, 2023
18129433 METHOD FOR IMPROVING HEIGHT DIFFERENCE BETWEEN GATES LAOBAK, ANDREW KEELAN 1713 §103 Non-Final OA 26d overdue Pending Mar 31, 2023
18125877 Reaction Device for Improving Epitaxial Growth Uniformity BERMAN, JASON 1794 §103 Non-Final OA 60d overdue Pending Mar 24, 2023
18175878 Method for Manufacturing Metal Zero Layer DUREN, TIMOTHY EDWARD 2817 §103 Final Rejection 10d overdue Pending Feb 28, 2023
18175092 METHOD FOR MANUFACTURING SIGMA-SHAPED GROOVE JUNGE, BRYAN R. 2897 §103 Non-Final OA 29d overdue Pending Feb 27, 2023
18167181 Layout Structure of High-Drive-Multiple Standard Cell BELOUSOV, ALEXANDER 2818 §103 Non-Final OA Pending Feb 10, 2023
18154154 OPC Method LIN, ARIC 2851 §103§112 Non-Final OA Pending Jan 13, 2023
17952916 Self-Aligned Gate Contact Fin Field Effect Transistor and Method for Manufacturing the Same KOO, LAMONT B 2813 §103 Non-Final OA Pending Sep 26, 2022
17877324 Method for Manufacturing Integrated Metal Resistance Layer PRIDEMORE, NATHAN ANDREW 2898 §103§112 Non-Final OA 1d overdue Pending Jul 29, 2022
17839313 METHOD FOR MANUFACTURING METAL GATE MOS TRANSISTOR NIELSEN, DEREK LANG 2899 §103 Non-Final OA Pending Jun 13, 2022
18221976 Method for Forming Mixed Substrate SLUTSKER, JULIA 2891 §103 Non-Final OA 19d overdue Pending Jul 14, 2023
17896286 Method for Improving Stability of Etching Rate of Etching Chamber KIM, JAHAE 2897 §103§112 Non-Final OA Pending Aug 26, 2022

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