19 pending office actions • 12 art units • 19 examiners • 0 of 19 (0%) have an AI response strategy ready • 55 patents granted in the last 365 days
Based on the USPTO statutory response window for each pending office action. 6 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.
Every pending office action with a known statutory deadline, placed on a days-until-due axis. Dots left of Today are overdue; the further right, the more runway. Cases that share a deadline window stack vertically. 6 of the docket's apps have a known mailing date.
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §101 only | 1 (5%) |
| §103 only | 12 (63%) |
| §112 only | 1 (5%) |
| Multi-statute (no §101) | 5 (26%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| TRAN, DZUNG | 1 | 83.5% | +5.5% |
| LU, JIONG-PING | 1 | 83.5% | +7.9% |
| LUONG, DUY HAN | 1 | 94.7% | +8.3% |
| MANG, LAL C | 1 | 76.2% | +16.2% |
| REAMES, MATTHEW L | 1 | 77.0% | +18.0% |
| PETERSON, ERIK T | 1 | 77.2% | +11.2% |
| HANEY, NOAH JAMES | 1 | 79.6% | +30.8% |
| WEGNER, AARON MICHAEL | 1 | 72.2% | -1.3% |
| LAOBAK, ANDREW KEELAN | 1 | 76.6% | +30.8% |
| BERMAN, JASON | 1 | 63.7% | +21.6% |
Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 3 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18783249 | METHOD FOR IMPROVING PERFORMANCE OF MOS DEVICE | TRAN, DZUNG | — |
| 18778752 | POLYSILICON GATE ETCH METHOD | LU, JIONG-PING | — |
| 18744498 | THREE-PORT SRAM CIRCUIT | LUONG, DUY HAN | — |
Multi-statute / §101-driven matters, or cases in front of an examiner with an allow rate under 30%. The top 6 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 17877324 | Method for Manufacturing Integrated Metal Resistance Layer | PRIDEMORE, NATHAN ANDREW | 1d overdue |
| 18644604 | METHOD FOR REDUCING MEASUREMENT ERRORS IN CRITICAL PATTERN DIMENSIONS OF POLYCRYSTAL LAYERS | MANG, LAL C | — |
| 18614346 | METHOD FOR MANUFACTURING ALUMINUM PAD OF SEMICONDUCTOR CHIP | PETERSON, ERIK T | — |
| 18426052 | APPARATUS FOR FILTERING LIGHTING SOURCE OF SEMICONDUCTOR APPEARANCE DETECTION DEVICE | HANEY, NOAH JAMES | — |
| 18154154 | OPC Method | LIN, ARIC | — |
| 17896286 | Method for Improving Stability of Etching Rate of Etching Chamber | KIM, JAHAE | — |
Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 6 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18125877 | Reaction Device for Improving Epitaxial Growth Uniformity | BERMAN, JASON | 60d overdue |
| 18129433 | METHOD FOR IMPROVING HEIGHT DIFFERENCE BETWEEN GATES | LAOBAK, ANDREW KEELAN | 26d overdue |
| 18644604 | METHOD FOR REDUCING MEASUREMENT ERRORS IN CRITICAL PATTERN DIMENSIONS OF POLYCRYSTAL LAYERS | MANG, LAL C | — |
| 18641881 | HIGH-VOLTAGE METAL GATE DEVICE AND PROCESS METHOD FOR THE SAME | REAMES, MATTHEW L | — |
| 18614346 | METHOD FOR MANUFACTURING ALUMINUM PAD OF SEMICONDUCTOR CHIP | PETERSON, ERIK T | — |
| 18426052 | APPARATUS FOR FILTERING LIGHTING SOURCE OF SEMICONDUCTOR APPEARANCE DETECTION DEVICE | HANEY, NOAH JAMES | — |
| Art Unit | Apps |
|---|---|
| 2897 | 3 |
| 2825 | 1 |
| 2827 | 1 |
| 1713 | 1 |
| 1794 | 1 |
| 2817 | 1 |
| 2818 | 1 |
| 2851 | 1 |
| 2813 | 1 |
| 2898 | 1 |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 18783249 | METHOD FOR IMPROVING PERFORMANCE OF MOS DEVICE | TRAN, DZUNG | — | §103 | Non-Final OA | — | Pending | Jul 24, 2024 |
| 18778752 | POLYSILICON GATE ETCH METHOD | LU, JIONG-PING | — | §103 | Non-Final OA | — | Pending | Jul 19, 2024 |
| 18744498 | THREE-PORT SRAM CIRCUIT | LUONG, DUY HAN | 2825 | §103 | Non-Final OA | — | Pending | Jun 14, 2024 |
| 18644604 | METHOD FOR REDUCING MEASUREMENT ERRORS IN CRITICAL PATTERN DIMENSIONS OF POLYCRYSTAL LAYERS | MANG, LAL C | — | §101 | Non-Final OA | — | Pending | Apr 24, 2024 |
| 18641881 | HIGH-VOLTAGE METAL GATE DEVICE AND PROCESS METHOD FOR THE SAME | REAMES, MATTHEW L | — | §112 | Non-Final OA | — | Pending | Apr 22, 2024 |
| 18614346 | METHOD FOR MANUFACTURING ALUMINUM PAD OF SEMICONDUCTOR CHIP | PETERSON, ERIK T | — | §102§103§112 | Non-Final OA | — | Pending | Mar 22, 2024 |
| 18426052 | APPARATUS FOR FILTERING LIGHTING SOURCE OF SEMICONDUCTOR APPEARANCE DETECTION DEVICE | HANEY, NOAH JAMES | 2827 | §103§112 | Non-Final OA | — | Pending | Jan 29, 2024 |
| 18465011 | METHOD FOR MEASURING THICKNESS OF SILICON EPITAXIAL LAYER | WEGNER, AARON MICHAEL | 2897 | §103 | Non-Final OA | — | Pending | Sep 11, 2023 |
| 18129433 | METHOD FOR IMPROVING HEIGHT DIFFERENCE BETWEEN GATES | LAOBAK, ANDREW KEELAN | 1713 | §103 | Non-Final OA | 26d overdue | Pending | Mar 31, 2023 |
| 18125877 | Reaction Device for Improving Epitaxial Growth Uniformity | BERMAN, JASON | 1794 | §103 | Non-Final OA | 60d overdue | Pending | Mar 24, 2023 |
| 18175878 | Method for Manufacturing Metal Zero Layer | DUREN, TIMOTHY EDWARD | 2817 | §103 | Final Rejection | 10d overdue | Pending | Feb 28, 2023 |
| 18175092 | METHOD FOR MANUFACTURING SIGMA-SHAPED GROOVE | JUNGE, BRYAN R. | 2897 | §103 | Non-Final OA | 29d overdue | Pending | Feb 27, 2023 |
| 18167181 | Layout Structure of High-Drive-Multiple Standard Cell | BELOUSOV, ALEXANDER | 2818 | §103 | Non-Final OA | — | Pending | Feb 10, 2023 |
| 18154154 | OPC Method | LIN, ARIC | 2851 | §103§112 | Non-Final OA | — | Pending | Jan 13, 2023 |
| 17952916 | Self-Aligned Gate Contact Fin Field Effect Transistor and Method for Manufacturing the Same | KOO, LAMONT B | 2813 | §103 | Non-Final OA | — | Pending | Sep 26, 2022 |
| 17877324 | Method for Manufacturing Integrated Metal Resistance Layer | PRIDEMORE, NATHAN ANDREW | 2898 | §103§112 | Non-Final OA | 1d overdue | Pending | Jul 29, 2022 |
| 17839313 | METHOD FOR MANUFACTURING METAL GATE MOS TRANSISTOR | NIELSEN, DEREK LANG | 2899 | §103 | Non-Final OA | — | Pending | Jun 13, 2022 |
| 18221976 | Method for Forming Mixed Substrate | SLUTSKER, JULIA | 2891 | §103 | Non-Final OA | 19d overdue | Pending | Jul 14, 2023 |
| 17896286 | Method for Improving Stability of Etching Rate of Etching Chamber | KIM, JAHAE | 2897 | §103§112 | Non-Final OA | — | Pending | Aug 26, 2022 |
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