Prosecution Insights
Prosecution Insights
Technology areas: Chemistry & Materials • Semiconductors, Circuits & Optics
21 pending office actions • 9 art units • 21 examiners • 0 of 21 (0%) have an AI response strategy ready • 33 patents granted in the last 365 days
Soitec has 20 pending office actions within the Semiconductors, Circuits & Optics technology area. The prosecution of these matters involves 20 distinct examiners, resulting in 20 distinct examiners for the 20 pending actions. These actions are spread across 9 distinct art units, indicating that the company's semiconductor applications are being reviewed by a variety of technical groups.
TUROCY, DAVID P is the busiest examiner for the portfolio, holding 1 pending office action. This distribution indicates that Soitec's patent applications are being reviewed by 20 different individuals, with no single examiner handling multiple cases simultaneously. Because there are 20 distinct examiners working across 9 distinct art units, the company frequently interacts with multiple examiners within the same unit. This decentralized examiner landscape requires a prosecution strategy that accounts for many different individual perspectives even when the technical subject matter remains within the Semiconductors, Circuits & Optics field.
Based on the USPTO statutory response window for each pending office action. 4 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.
Every pending office action with a known statutory deadline, placed on a days-until-due axis. Dots left of Today are overdue; the further right, the more runway. Cases that share a deadline window stack vertically. 4 of the docket's apps have a known mailing date.
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §103 only | 8 (38%) |
| §102 only | 3 (14%) |
| Multi-statute (no §101) | 10 (48%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| TUROCY, DAVID P | 1 | 46.9% | +35.5% |
| CAILLOUET, CHRISTOPHER C | 1 | 67.7% | +14.8% |
| HOQUE, MOHAMMAD M | 1 | 85.2% | +9.5% |
| RIVERA, JOSHEL | 1 | 73.6% | +6.7% |
| TURNER, BRIAN | 1 | 83.4% | +4.4% |
| KRUPICKA, ADAM C | 1 | 62.1% | +27.0% |
| PRASAD, NEIL R | 1 | 85.4% | +9.8% |
| KOCH, GEORGE R | 1 | 72.9% | +17.3% |
| ULLAH, ELIAS | 1 | 85.0% | +7.8% |
| ISAAC, STANETTA D | 1 | 85.8% | -36.2% |
Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 2 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18886782 | METHOD FOR TRANSFERRING BLOCKS FROM A DONOR SUBSTRATE ONTO A RECEIVER SUBSTRATE BY IMPLANTING IONS IN THE DONOR SUBSTRATE THROUGH A MASK, BONDING THE DONOR SUBSTRATE TO THE RECEIVER SUBSTRATE, AND DETACHING THE DONOR | HOQUE, MOHAMMAD M | — |
| 18727189 | METHOD FOR TREATING SUBSTRATES | ULLAH, ELIAS | — |
Multi-statute / §101-driven matters, or cases in front of an examiner with an allow rate under 30%. The top 8 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18248169 | METHOD FOR PRODUCING A SUBSTRATE FOR EPITAXIAL GROWTH OF A GALLIUM-BASED III-N ALLOY LAYER | GHYKA, ALEXANDER G | 21d |
| 18880143 | PROCESS FOR FABRICATING A STRUCTURE COMPRISING A LAYER THAT ACTS AS A BARRIER TO DIFFUSION OF ATOMIC SPECIES | TUROCY, DAVID P | — |
| 18834482 | PROCESS FOR FABRICATING A DOUBLE SEMICONDUCTOR-ON-INSULATOR STRUCTURE | TURNER, BRIAN | — |
| 18784161 | METHOD FOR PRODUCING AN ADVANCED SUBSTRATE FOR HYBRID INTEGRATION | PRASAD, NEIL R | — |
| 18729023 | METHOD FOR PRODUCING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING A PIEZOELECTRIC LAYER TO A CARRIER SUBSTRATE | KOCH, GEORGE R | — |
| 18722778 | METHOD FOR MANUFACTURING DISASSEMBLABLE SUBSTRATES | ISAAC, STANETTA D | — |
| 18722862 | METHOD FOR FABRICATING A DONOR SUBSTRATE | ROBERTSON, NOAH CHRISTOPHER | — |
| 18718313 | PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING A POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND AN ACTIVE LAYER OF SINGLE-CRYSTAL SILICON CARBIDE | GEBREMARIAM, SAMUEL A | — |
Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 4 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18880143 | PROCESS FOR FABRICATING A STRUCTURE COMPRISING A LAYER THAT ACTS AS A BARRIER TO DIFFUSION OF ATOMIC SPECIES | TUROCY, DAVID P | — |
| 18901953 | PSEUDO-SUBSTRATE WITH IMPROVED EFFICIENCY OF USAGE OF SINGLE CRYSTAL MATERIAL | CAILLOUET, CHRISTOPHER C | — |
| 18787009 | STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SUBSTRATE AND SUBSTRATE FOR THE EPITAXIAL GROWTH OF MONOCRYSTALLINE LAYERS OF ALN MATERIAL | KRUPICKA, ADAM C | — |
| 18729023 | METHOD FOR PRODUCING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING A PIEZOELECTRIC LAYER TO A CARRIER SUBSTRATE | KOCH, GEORGE R | — |
| Art Unit | Apps |
|---|---|
| 1745 | 2 |
| 2893 | 2 |
| 2897 | 2 |
| 1718 | 1 |
| 1766 | 1 |
| 2818 | 1 |
| 2812 | 1 |
| 3729 | 1 |
| 2688 | 1 |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 18880143 | PROCESS FOR FABRICATING A STRUCTURE COMPRISING A LAYER THAT ACTS AS A BARRIER TO DIFFUSION OF ATOMIC SPECIES | TUROCY, DAVID P | 1718 | §102§103 | Final Rejection | — | Pending | Dec 30, 2024 |
| 18901953 | PSEUDO-SUBSTRATE WITH IMPROVED EFFICIENCY OF USAGE OF SINGLE CRYSTAL MATERIAL | CAILLOUET, CHRISTOPHER C | 1745 | §103 | Final Rejection | — | Pending | Sep 30, 2024 |
| 18886782 | METHOD FOR TRANSFERRING BLOCKS FROM A DONOR SUBSTRATE ONTO A RECEIVER SUBSTRATE BY IMPLANTING IONS IN THE DONOR SUBSTRATE THROUGH A MASK, BONDING THE DONOR SUBSTRATE TO THE RECEIVER SUBSTRATE, AND DETACHING THE DONOR | HOQUE, MOHAMMAD M | — | §102 | Non-Final OA | — | Pending | Sep 16, 2024 |
| 18837681 | COMPOSITE STRUCTURE AND MANUFACTURING METHOD THEREOF | RIVERA, JOSHEL | — | §102 | Non-Final OA | — | Pending | Aug 12, 2024 |
| 18834482 | PROCESS FOR FABRICATING A DOUBLE SEMICONDUCTOR-ON-INSULATOR STRUCTURE | TURNER, BRIAN | — | §103§112 | Non-Final OA | — | Pending | Jul 30, 2024 |
| 18787009 | STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SUBSTRATE AND SUBSTRATE FOR THE EPITAXIAL GROWTH OF MONOCRYSTALLINE LAYERS OF ALN MATERIAL | KRUPICKA, ADAM C | — | §103 | Non-Final OA | — | Pending | Jul 29, 2024 |
| 18784161 | METHOD FOR PRODUCING AN ADVANCED SUBSTRATE FOR HYBRID INTEGRATION | PRASAD, NEIL R | — | §102§103 | Non-Final OA | — | Pending | Jul 25, 2024 |
| 18729023 | METHOD FOR PRODUCING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING A PIEZOELECTRIC LAYER TO A CARRIER SUBSTRATE | KOCH, GEORGE R | 1745 | §103§112 | Final Rejection | — | Pending | Jul 15, 2024 |
| 18727189 | METHOD FOR TREATING SUBSTRATES | ULLAH, ELIAS | 2893 | §102 | Non-Final OA | — | Pending | Jul 08, 2024 |
| 18722778 | METHOD FOR MANUFACTURING DISASSEMBLABLE SUBSTRATES | ISAAC, STANETTA D | — | §102§103 | Non-Final OA | — | Pending | Jun 21, 2024 |
| 18722862 | METHOD FOR FABRICATING A DONOR SUBSTRATE | ROBERTSON, NOAH CHRISTOPHER | — | §103§112Other | Non-Final OA | — | Pending | Jun 21, 2024 |
| 18718313 | PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR STRUCTURE COMPRISING A POLYCRYSTALLINE SILICON CARBIDE SUBSTRATE AND AN ACTIVE LAYER OF SINGLE-CRYSTAL SILICON CARBIDE | GEBREMARIAM, SAMUEL A | — | §103§112 | Non-Final OA | — | Pending | Jun 10, 2024 |
| 18004594 | SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICALLY CONDUCTIVE BONDING INTERFACE, AND ASSOCIATED MANUFACTURING METHOD | LOHAKARE, PRATIKSHA JAYANT | — | §103 | Non-Final OA | — | Pending | Apr 30, 2024 |
| 18461226 | PROCESS FOR MANUFACTURING A TWO-DIMENSIONAL FILM OF HEXAGONAL CRYSTALLINE STRUCTURE USING EPITAXIAL GROWTH ON A TRANSFERRED THIN METAL FILM | WASHVILLE, JEFFREY D | 1766 | §102§112 | Non-Final OA | — | Pending | Sep 05, 2023 |
| 18548616 | METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE | JUNGE, BRYAN R. | 2897 | §103§112 | Final Rejection | — | Pending | Sep 01, 2023 |
| 18263802 | METHOD FOR PREPARING THE RESIDUE OF A DONOR SUBSTRATE, A LAYER OF WHICH HAS BEEN REMOVED BY DELAMINATION | DEGRASSE, IAN ISAAC | 2818 | §103 | Non-Final OA | 23d | Pending | Aug 01, 2023 |
| 18248169 | METHOD FOR PRODUCING A SUBSTRATE FOR EPITAXIAL GROWTH OF A GALLIUM-BASED III-N ALLOY LAYER | GHYKA, ALEXANDER G | 2812 | §102§103 | Final Rejection | 21d | Pending | Apr 06, 2023 |
| 17907245 | PROCESS FOR MANUFACTURING A PIEZOELECTRIC STRUCTURE FOR A RADIOFREQUENCY DEVICE WHICH STRUCTURE CAN BE USED TO TRANSFER A PIEZOELECTRIC LAYER, AND PROCESS FOR TRANSFERRING SUCH A PIEZOELECTRIC LAYER | CARLEY, JEFFREY T. | 3729 | §103 | Non-Final OA | — | Pending | Mar 17, 2023 |
| 18042948 | SURFACE ACOUSTIC WAVE SENSOR DEVICE FORMED ON A QUARTZ SUBSTRATE | KLIMOWICZ, WILLIAM JOSEPH | 2688 | §103 | Non-Final OA | 55d | Pending | Feb 24, 2023 |
| 17757822 | METHOD FOR MANUFACTURING A FULLY-DEPLETED SEMICONDUCTOR-ON-INSULATOR (FD_SOI) STRUCTURE INCLUDING HEAT-TREATING AN SOI SUBSTATE HAVING A P-TYPE MONOCRYSTALLINE SEMICONDUCTOR LAYER TO FORM A P-N JUNCTION BY DIFFUSION OF DOPANTS | MAI, ANH D | 2893 | §103 | Non-Final OA | 15d | Pending | Jun 21, 2022 |
| 17416368 | METHOD FOR TRANSFERRING A SURFACE LAYER TO CAVITIES | ZHU, SHENG-BAI | 2897 | §103 | Final Rejection | — | Pending | Jun 18, 2021 |
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