Prosecution Insights
Prosecution Insights
20 pending office actions • 11 art units • 20 examiners • 0 of 20 (0%) have an AI response strategy ready • 35 patents granted in the last 365 days
Based on the USPTO statutory response window for each pending office action. 4 of the docket's apps have a known mailing date; the rest are excluded from the tile counts.
Every pending office action with a known statutory deadline, placed on a days-until-due axis. Dots left of Today are overdue; the further right, the more runway. Cases that share a deadline window stack vertically. 4 of the docket's apps have a known mailing date.
Difficulty is derived from the rejection statutes on the most recent pending office action. §101-driven and multi-statute cases are graded Hard; §112-only and obviousness-type double-patenting cases are graded Easy; everything else is Medium. "Unknown" means we have not yet parsed a statute for that office action.
| Bucket | Cases |
|---|---|
| §103 only | 9 (45%) |
| §102 only | 2 (10%) |
| §112 only | 1 (5%) |
| Multi-statute (no §101) | 8 (40%) |
How the docket's pending cases split across USPTO tech-center bands.
Manual office-action response work runs about 10 hours per case. The time-saved bands below show what IP Author's prosecution pipeline typically delivers — a conservative 20% on the low end, 35% in the middle, 50% on the high end.
| Examiner | Apps on this docket | Allow rate | Interview lift |
|---|---|---|---|
| TUROCY, DAVID P | 1 | 46.9% | +35.6% |
| RIVERA, JOSHEL | 1 | 73.5% | +6.7% |
| TURNER, BRIAN | 1 | 83.2% | +4.5% |
| KRUPICKA, ADAM C | 1 | 61.9% | +27.2% |
| KOCH, GEORGE R | 1 | 72.8% | +17.7% |
| ULLAH, ELIAS | 1 | 84.9% | +7.8% |
| ROBERTSON, NOAH CHRISTOPHER | 1 | — | — |
| ISAAC, STANETTA D | 1 | 85.6% | -36.9% |
| WOLDEGEORGIS, ERMIAS T | 1 | 71.0% | +12.4% |
| LOHAKARE, PRATIKSHA JAYANT | 1 | 81.9% | +15.5% |
Cases in front of an examiner with an allow rate of 80%+ where the difficulty is Easy or Medium. The top 3 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18834482 | PROCESS FOR FABRICATING A DOUBLE SEMICONDUCTOR-ON-INSULATOR STRUCTURE | TURNER, BRIAN | — |
| 18727189 | METHOD FOR TREATING SUBSTRATES | ULLAH, ELIAS | — |
| 18004594 | SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICALLY CONDUCTIVE BONDING INTERFACE, AND ASSOCIATED MANUFACTURING METHOD | LOHAKARE, PRATIKSHA JAYANT | — |
Multi-statute / §101-driven matters, or cases in front of an examiner with an allow rate under 30%. The top 8 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18248169 | METHOD FOR PRODUCING A SUBSTRATE FOR EPITAXIAL GROWTH OF A GALLIUM-BASED III-N ALLOY LAYER | GHYKA, ALEXANDER G | 21d |
| 18880143 | PROCESS FOR FABRICATING A STRUCTURE COMPRISING A LAYER THAT ACTS AS A BARRIER TO DIFFUSION OF ATOMIC SPECIES | TUROCY, DAVID P | — |
| 18729023 | METHOD FOR PRODUCING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING A PIEZOELECTRIC LAYER TO A CARRIER SUBSTRATE | KOCH, GEORGE R | — |
| 18722862 | METHOD FOR FABRICATING A DONOR SUBSTRATE | ROBERTSON, NOAH CHRISTOPHER | — |
| 18722778 | METHOD FOR MANUFACTURING DISASSEMBLABLE SUBSTRATES | ISAAC, STANETTA D | — |
| 18716376 | METHOD FOR MANUFACTURING A 3D CIRCUIT WITH SHARED RECRYSTALLISATION AND DOPANT ACTIVATION STEPS | WOLDEGEORGIS, ERMIAS T | — |
| 18685991 | METHOD FOR TRANSFERRING A USEFUL LAYER TO A FRONT FACE OF CARRIER SUBSTRATE | SMITH JR., JIMMY R | — |
| 18548616 | METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE | JUNGE, BRYAN R. | — |
Cases in front of an examiner whose interview lift is 10 percentage points or more — i.e. interviewed cases historically resolve more favorably than non-interviewed ones. The top 5 ordered by deadline are shown.
| App # | Title | Examiner | Due in |
|---|---|---|---|
| 18880143 | PROCESS FOR FABRICATING A STRUCTURE COMPRISING A LAYER THAT ACTS AS A BARRIER TO DIFFUSION OF ATOMIC SPECIES | TUROCY, DAVID P | — |
| 18787009 | STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SUBSTRATE AND SUBSTRATE FOR THE EPITAXIAL GROWTH OF MONOCRYSTALLINE LAYERS OF ALN MATERIAL | KRUPICKA, ADAM C | — |
| 18729023 | METHOD FOR PRODUCING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING A PIEZOELECTRIC LAYER TO A CARRIER SUBSTRATE | KOCH, GEORGE R | — |
| 18716376 | METHOD FOR MANUFACTURING A 3D CIRCUIT WITH SHARED RECRYSTALLISATION AND DOPANT ACTIVATION STEPS | WOLDEGEORGIS, ERMIAS T | — |
| 18004594 | SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICALLY CONDUCTIVE BONDING INTERFACE, AND ASSOCIATED MANUFACTURING METHOD | LOHAKARE, PRATIKSHA JAYANT | — |
| Art Unit | Apps |
|---|---|
| 1745 | 2 |
| 2893 | 2 |
| 1718 | 1 |
| 1746 | 1 |
| 2897 | 1 |
| 2818 | 1 |
| 2812 | 1 |
| 2688 | 1 |
| 2898 | 1 |
| 2874 | 1 |
| App # | Title | Examiner | Art Unit | Statutes | Status | Due in | AI | Filed |
|---|---|---|---|---|---|---|---|---|
| 18880143 | PROCESS FOR FABRICATING A STRUCTURE COMPRISING A LAYER THAT ACTS AS A BARRIER TO DIFFUSION OF ATOMIC SPECIES | TUROCY, DAVID P | 1718 | §102§103 | Final Rejection | — | Pending | Dec 30, 2024 |
| 18837681 | COMPOSITE STRUCTURE AND MANUFACTURING METHOD THEREOF | RIVERA, JOSHEL | — | §102 | Non-Final OA | — | Pending | Aug 12, 2024 |
| 18834482 | PROCESS FOR FABRICATING A DOUBLE SEMICONDUCTOR-ON-INSULATOR STRUCTURE | TURNER, BRIAN | — | §112 | Non-Final OA | — | Pending | Jul 30, 2024 |
| 18787009 | STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SUBSTRATE AND SUBSTRATE FOR THE EPITAXIAL GROWTH OF MONOCRYSTALLINE LAYERS OF ALN MATERIAL | KRUPICKA, ADAM C | — | §103 | Non-Final OA | — | Pending | Jul 29, 2024 |
| 18729023 | METHOD FOR PRODUCING A DONOR SUBSTRATE FOR TRANSFERRING A PIEZOELECTRIC LAYER, AND METHOD FOR TRANSFERRING A PIEZOELECTRIC LAYER TO A CARRIER SUBSTRATE | KOCH, GEORGE R | 1745 | §103§112 | Non-Final OA | — | Pending | Jul 15, 2024 |
| 18727189 | METHOD FOR TREATING SUBSTRATES | ULLAH, ELIAS | 2893 | §102 | Non-Final OA | — | Pending | Jul 08, 2024 |
| 18722862 | METHOD FOR FABRICATING A DONOR SUBSTRATE | ROBERTSON, NOAH CHRISTOPHER | — | §103§112Other | Non-Final OA | — | Pending | Jun 21, 2024 |
| 18722778 | METHOD FOR MANUFACTURING DISASSEMBLABLE SUBSTRATES | ISAAC, STANETTA D | — | §102§103 | Non-Final OA | — | Pending | Jun 21, 2024 |
| 18716376 | METHOD FOR MANUFACTURING A 3D CIRCUIT WITH SHARED RECRYSTALLISATION AND DOPANT ACTIVATION STEPS | WOLDEGEORGIS, ERMIAS T | — | §103§112 | Non-Final OA | — | Pending | Jun 04, 2024 |
| 18004594 | SEMICONDUCTOR STRUCTURE COMPRISING AN ELECTRICALLY CONDUCTIVE BONDING INTERFACE, AND ASSOCIATED MANUFACTURING METHOD | LOHAKARE, PRATIKSHA JAYANT | — | §103 | Non-Final OA | — | Pending | Apr 30, 2024 |
| 18685991 | METHOD FOR TRANSFERRING A USEFUL LAYER TO A FRONT FACE OF CARRIER SUBSTRATE | SMITH JR., JIMMY R | 1745 | §102§103 | Final Rejection | — | Pending | Feb 23, 2024 |
| 18287148 | METHOD OF MANUFACTURING A MULTILAYER STRUCTURE | GROSS, CARSON | 1746 | §103 | Final Rejection | — | Pending | Oct 16, 2023 |
| 18548616 | METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE | JUNGE, BRYAN R. | 2897 | §103§112 | Final Rejection | — | Pending | Sep 01, 2023 |
| 18263802 | METHOD FOR PREPARING THE RESIDUE OF A DONOR SUBSTRATE, A LAYER OF WHICH HAS BEEN REMOVED BY DELAMINATION | DEGRASSE, IAN ISAAC | 2818 | §103 | Non-Final OA | 23d | Pending | Aug 01, 2023 |
| 18248169 | METHOD FOR PRODUCING A SUBSTRATE FOR EPITAXIAL GROWTH OF A GALLIUM-BASED III-N ALLOY LAYER | GHYKA, ALEXANDER G | 2812 | §102§103 | Final Rejection | 21d | Pending | Apr 06, 2023 |
| 18042948 | SURFACE ACOUSTIC WAVE SENSOR DEVICE FORMED ON A QUARTZ SUBSTRATE | KLIMOWICZ, WILLIAM JOSEPH | 2688 | §103 | Non-Final OA | 55d | Pending | Feb 24, 2023 |
| 17758624 | METHOD OF JOINING TWO SEMI-CONDUCTOR SUBSTRATES | WILCZEWSKI, MARY A | 2898 | §103Other | Non-Final OA | — | Pending | Jul 11, 2022 |
| 17757822 | METHOD FOR MANUFACTURING A FULLY-DEPLETED SEMICONDUCTOR-ON-INSULATOR (FD_SOI) STRUCTURE INCLUDING HEAT-TREATING AN SOI SUBSTATE HAVING A P-TYPE MONOCRYSTALLINE SEMICONDUCTOR LAYER TO FORM A P-N JUNCTION BY DIFFUSION OF DOPANTS | MAI, ANH D | 2893 | §103 | Final Rejection | 15d | Pending | Jun 21, 2022 |
| 17452197 | METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE | CHU, CHRIS H | 2874 | §103 | Non-Final OA | — | Pending | Oct 25, 2021 |
| 17417715 | SEMICONDUCTOR STRUCTURE FOR DIGITAL AND RADIOFREQUENCY APPLICATIONS | HRNJIC, ADIN | 2817 | §103 | Final Rejection | — | Pending | Jun 23, 2021 |
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