9 pending office actions
| App # | Title | Examiner | Art Unit | Status | Filed |
|---|---|---|---|---|---|
| 18843028 | METHOD FOR CORRECTING THE THICKNESS OF A PIEZOELECTRIC LAYER | MUSSER, BARBARA J | 1746 | Non-Final OA | Aug 30, 2024 |
| 18685991 | METHOD FOR TRANSFERRING A USEFUL LAYER TO A FRONT FACE OF CARRIER SUBSTRATE | SMITH JR., JIMMY R | 1745 | Non-Final OA | Feb 23, 2024 |
| 18551346 | METHOD FOR TRANSFERRING A LAYER OF A HETEROSTRUCTURE | VU, DAVID | 2818 | Non-Final OA | Sep 19, 2023 |
| 18548616 | METHOD FOR MANUFACTURING A SILICON-CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE | JUNGE, BRYAN R. | 2897 | Non-Final OA | Sep 01, 2023 |
| 18263802 | METHOD FOR PREPARING THE RESIDUE OF A DONOR SUBSTRATE, A LAYER OF WHICH HAS BEEN REMOVED BY DELAMINATION | DEGRASSE, IAN ISAAC | 2818 | Final Rejection | Aug 01, 2023 |
| 18248169 | METHOD FOR PRODUCING A SUBSTRATE FOR EPITAXIAL GROWTH OF A GALLIUM-BASED III-N ALLOY LAYER | GHYKA, ALEXANDER G | 2812 | Non-Final OA | Apr 06, 2023 |
| 18179071 | COMPOSITE SUBSTRATES INCLUDING EPITAXIAL MONOCRYSTALLINE PIEZOELECTRIC LAYERS BONDED TO SUBSTRATES, AND ACOUSTIC WAVE DEVICES FORMED WITH SUCH COMPOSITE SUBSTRATES | ROSENAU, DEREK JOHN | 2837 | Non-Final OA | Mar 06, 2023 |
| 17757822 | METHOD FOR MANUFACTURING A FULLY-DEPLETED SEMICONDUCTOR-ON-INSULATOR (FD_SOI) STRUCTURE INCLUDING HEAT-TREATING AN SOI SUBSTATE HAVING A P-TYPE MONOCRYSTALLINE SEMICONDUCTOR LAYER TO FORM A P-N JUNCTION BY DIFFUSION OF DOPANTS | MAI, ANH D | 2893 | Non-Final OA | Jun 21, 2022 |
| 17417715 | SEMICONDUCTOR STRUCTURE FOR DIGITAL AND RADIOFREQUENCY APPLICATIONS | HRNJIC, ADIN | 2817 | Non-Final OA | Jun 23, 2021 |
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