Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2818 2894
This examiner grants 83% of resolved cases
Brian Turner is an examiner in Art Unit 2818 with 769 resolved cases. The allowance rate is 83.4 percent. The interview lift is 4.4 percent, indicating a small positive impact from interviews. This 4.4 percent lift suggests that while the baseline for success is already high, verbal communication can still help resolve final issues. Practitioners should view the 83.4 percent allowance rate as a very strong indicator of success for applications in Tech Center 2800.
The median days to allowance is 768. This is a relatively fast timeline, and combined with the 83.4 percent allowance rate, it suggests an efficient prosecution process. The 768-day median provides a clear benchmark for the expected duration of the process. With 769 resolved cases, the examiner has a substantial and consistent history of dispositions. The 4.4 percent lift remains a useful tactical consideration for streamlining the path to allowance. Overall, the metrics point to a favorable environment for applicants.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18356776 | HIGH PERFORMANCE FETS | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18216675 | EXPANDER AND SEMICONDUCTOR MANUFACTURING EQUIPMENT INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18340440 | SEMICONDUCTOR DEVICES | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18165563 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18562885 | DISPLAY PANEL AND DISPLAY DEVICE | Final Rejection | BOE Technology Group Co., Ltd. |
| 18825620 | QUANTUM DOT AND DISPLAY DEVICE INCLUDING THE SAME | Non-Final OA | Samsung Display Co., LTD. |
| 18324640 | HEAT DISSIPATION SOLUTIONS FOR INTEGRATED CIRCUIT PACKAGES | Non-Final OA | Intel Corporation |
| 18202678 | INTEGRATED CIRCUIT STRUCTURES WITH PARTIAL CHANNEL CAP REMOVAL | Non-Final OA | Intel Corporation |
| 18200967 | INTEGRATED CIRCUIT STRUCTURES HAVING METAL-CONTAINING FIN ISOLATION REGIONS | Non-Final OA | Intel Corporation |
| 17953873 | HIGH ASPECT RATIO METAL GATE CUTS | Non-Final OA | Intel Corporation |
| 17851985 | INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE POWER DELIVERY | Non-Final OA | Intel Corporation |
| 18530404 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE | Non-Final OA | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
| 18258891 | FILM-LIKE ADHESIVE AGENT, DICING/DIE-BONDING ALL-IN-ONE FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME | Non-Final OA | Resonac Corporation |
| 18258846 | FILM ADHESIVE AND METHOD FOR MAKING SAME; DICING/DIE BONDING INTEGRATED FILM AND METHOD FOR MAKING SAME; AND SEMICONDUCTOR DEVICE AND METHOD FOR MAKING SAME | Final Rejection | Resonac Corporation |
| 18132437 | WAFER LEVEL CHIP SCALE PACKAGE WITH SIDEWALL PROTECTION | Non-Final OA | MEDIATEK INC. |
| 17684251 | PACKAGED DEVICE CARRIER FOR THERMAL ENHANCEMENT OR SIGNAL REDISTRIBUTION OF PACKAGED SEMICONDUCTOR DEVICES | Non-Final OA | Texas Instruments Incorporated |
| 17392738 | SEMICONDUCTOR PACKAGE WITH RAISED DAM ON CLIP OR LEADFRAME | Final Rejection | Texas Instruments Incorporated |
| 18645043 | TWO TRANSISTOR CELLS FOR VERTICAL THREE-DIMENSIONAL MEMORY HAVING VERICAL DIGIT LINES | Non-Final OA | Micron Technology, Inc. |
| 18368449 | METHOD FOR SEMICONDUCTOR DIE EDGE PROTECTION AND SEMICONDUCTOR DIE SEPARATION | Final Rejection | Micron Technology, Inc. |
| 18111424 | MODIFIED SEMICONDUCTOR DIE CARRIER AND CARRIER TAPE | Non-Final OA | Micron Technology, Inc. |
| 17587971 | STACKED SEMICONDUCTOR DIE ASSEMBLIES WITH HIGH EFFICIENCY THERMAL PATHS AND MOLDED UNDERFILL | Non-Final OA | Micron Technology, Inc. |
| 18519805 | SEMICONDUCTOR STRUCTURES AND METHODS THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18513562 | SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME | Non-Final OA | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18231320 | METHOD FOR FORMING A SEMICONDUCTOR DEVICE AND DEVICES FABRICATED THEREOF | Final Rejection | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
| 18302010 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17894169 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18655833 | CONNECTION BETWEEN SOURCE/DRAIN AND GATE | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18526445 | SEMICONDUCTOR DEVICES WITH BACKSIDE ROUTING AND METHOD OF FORMING SAME | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18521931 | METAL SOURCE/DRAIN FEATURES | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18363350 | Different Source/Drain Profiles for N-type FinFETs and P-type FinFETs | Final Rejection | Taiwan Semiconductor Manufacturing Co., Ltd. |
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