Prosecution Insights
Prosecution Insights
Tech Center 4100 • Art Units: 2128 2817 2825 4100
This examiner grants 90% of resolved cases
Mushfique Siddique is an examiner in Tech Center 4100 and Art Unit 2128. The data shows 832 resolved cases and an allowance rate of 89.7 percent. This 89.7 percent allowance rate indicates the frequency of grants among applications reaching a final resolution. With 832 resolved cases, the data offers a stable view of the examiner's typical outcomes in this unit.
The impact of interviews is measured by an interview lift of 6.1 percent. This 6.1 percent lift suggests that direct communication provides a modest increase in the probability of allowance. Given the base allowance rate of 89.7 percent, practitioners can evaluate the utility of a formal discussion. The lift figure is derived from the 832 cases resolved by the examiner.
The prosecution speed is reflected in a median days to allowance of 705. This 705-day median represents the typical timeline for reaching a grant. Practitioners can expect a process that follows this 705-day benchmark when navigating applications through Art Unit 2128. The duration is a key metric for planning prosecution strategy in Tech Center 4100.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18979995 | SEMICONDUCTOR DEVICE | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18997212 | STORAGE DEVICE | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 19015640 | LLR Generation with Gaussian Modeling and Machine Learning | Non-Final OA | SK hynix Inc. |
| 19072633 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18956073 | SEMICONDUCTOR STORAGE DEVICE | Non-Final OA | Kioxia Corporation |
| 19046371 | MEMORY WITH PARALLEL MAIN AND TEST INTERFACES | Non-Final OA | Micron Technology, Inc. |
| 19020698 | PEC-BASED DIE READ LEVEL READ OFFSET | Non-Final OA | Micron Technology, Inc. |
| 19012171 | PROGRAMMING MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING | Non-Final OA | Micron Technology, Inc. |
| 18962822 | STRUCTURES FOR WORD LINE MULTIPLEXING IN THREE-DIMENSIONAL MEMORY ARRAYS | Non-Final OA | Micron Technology, Inc. |
| 18923597 | APPARATUS WITH MULTI-MODE-REGISTER READ AND WRITE COMMANDS | Non-Final OA | Micron Technology, Inc. |
| 18792404 | CELL VOLTAGE DROP COMPENSATION CIRCUIT | Final Rejection | Micron Technology, Inc. |
| 18775981 | SPARING TECHNIQUES IN STACKED MEMORY ARCHITECTURES | Final Rejection | Micron Technology, Inc. |
| 18642144 | Control Circuitry for Scheduling Aspects of Usage-Based Disturbance Mitigation Based on Different External Commands | Non-Final OA | Micron Technology, Inc. |
| 18898466 | ADJUSTING TRAINING DELAYS IN SDRAM | Non-Final OA | Advanced Micro Devices, Inc. |
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