Tech Center 2800 • Art Units: 2825
This examiner grants 89% of resolved cases
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18828789 | SEMICONDUCTOR DEVICE AND MEMORY SYSTEM | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18760350 | LOW DROPOUT REGULATOR AND MEMORY DEVICE INCLUDING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18154436 | FLEXIBLE SRAM PRE-CHARGE SYSTEMS AND METHODS FOR MINIMIZING LEAKAGE AND REDUCING POWER CONSUMPTION | Non-Final OA | Microsoft Technology Licensing, LLC |
| 18789005 | PARTIAL ARRAY SPARING IN A MEMORY | Non-Final OA | International Business Machines Corporation |
| 18961689 | PROCESSING-IN-MEMORY DEVICE BASED ON RESISTIVE MEMORY AND METHOD THEREOF | Non-Final OA | KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION |
| 18782815 | THREE-PORT SRAM CELL AND LAYOUT METHOD | Non-Final OA | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 17538478 | IN-MEMORY COMPUTE SRAM WITH INTEGRATED TOGGLE/COPY OPERATION AND RECONFIGURABLE LOGIC OPERATIONS | Non-Final OA | Intel Corporation |
| 18791706 | SENSE AMPLIFIER WITH DIGIT LINE MULTIPLEXING | Non-Final OA | Micron Technology, Inc. |
| 18792404 | CELL VOLTAGE DROP COMPENSATION CIRCUIT | Non-Final OA | Micron Technology, Inc. |
| 18788532 | TWO-STAGE VOLTAGE CALIBRATION UPON POWER-UP OF MEMORY DEVICE | Non-Final OA | MICRON TECHNOLOGY, INC. |
| 18786100 | PROGRAMMING DATA IN MEMORY | Non-Final OA | Micron Technology, Inc. |
| 18781804 | DYNAMIC BUFFER LIMIT FOR AT-RISK DATA | Non-Final OA | Micron Technology, Inc. |
| 18749446 | SEMICONDUCTOR DEVICE HAVING ROW DECODER CIRCUIT | Non-Final OA | MICRON TECHNOLOGY, INC. |
| 19115730 | METHOD OF OPERATION OF MULTI-BANK DRAM WITH SUBBANK STRUCTURE | Non-Final OA | GALAXYCORE SHANGHAI LIMITED CORPORATION |
| 18600715 | SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | Kioxia Corporation |
| 18894510 | MEMORY CIRCUIT | Non-Final OA | ROHM CO., LTD. |
| 18786146 | MEMORY DEVICE AND METHOD OF OPERATING THE SAME | Non-Final OA | SK hynix Inc. |
| 18499027 | MAIN WORD LINE DRIVER AND MEMORY APPARATUS USING THE SAME | Final Rejection | SK hynix Inc. |
| 18660852 | THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF | Non-Final OA | YANGTZE MEMORY TECHNOLOGIES CO., LTD. |
| 18614078 | MEMORY DEVICES AND OPERATING METHODS THEREOF, MEMORY SYSTEMS, AND SENSING CIRCUITS | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18467097 | APPARATUSES AND METHODS FOR CONTROLLING STEAL RATES | Non-Final OA | Lodestar Licensing Group LLC |
| 18305080 | Device, System, and Method for Implementing a Voltage Range for Training Physical Memory | Non-Final OA | Advanced Micro Devices, Inc. |
| 18731026 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF | Non-Final OA | NATIONAL TAIWAN UNIVERSITY |
| 17813598 | NEURAL NETWORK SYSTEM, HIGH DENSITY EMBEDDED-ARTIFICIAL SYNAPTIC ELEMENT AND OPERATING METHOD THEREOF | Non-Final OA | NATIONAL TSING HUA UNIVERSITY |
| 18329583 | NON-VOLATILE MEMORY FOR ADJUSTING PROGRAMMING VERIFICATION VOLTAGE AND PROGRAMMING METHOD THEREOF | Non-Final OA | MACRONIX International Co., Ltd. |
| 18067088 | BAYESIAN NEURAL NETWORK WITH RESISTIVE MEMORY HARDWARE ACCELERATOR AND METHOD FOR PROGRAMMING THE SAME | Non-Final OA | Commissariat à l'énergie atomique et aux énergies alternatives |
| 18333916 | ENDURANCE, POWER, AND PERFORMANCE IMPROVEMENT LOGIC FOR A MEMORY ARRAY | Final Rejection | NUMEM Inc. |
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