Prosecution Insights
Prosecution Insights
Tech Center 2800 • Art Units: 2426 2811 2891
This examiner grants 73% of resolved cases
Natalia A Gondarenko is an examiner in Tech Center 2800, Art Unit 2426. With 909 resolved cases, the examiner has an allowance rate of 72.8 percent. This is a high rate, showing that more than seven out of ten of the 909 resolved cases are eventually allowed. The data indicates a consistent history of grants in Art Unit 2426.
The interview lift is 20.5 percent, which is a significant positive figure. This indicates that conducting an interview is associated with a substantial increase in the likelihood of allowance over the 72.8 percent baseline. Practitioners should consider an interview as a key part of their strategy, as the 20.5 percent lift shows it is an effective way to move applications toward a grant. This metric highlights the value of direct communication.
The median days to allowance for this examiner is 878. This is a fast timeline, showing that successful applications are granted relatively quickly. The combination of the allowance rate and the 878 day median pendency makes for a favorable environment in Tech Center 2800. The 878 day duration is a reliable benchmark for successful prosecution.
| App # | Title | Status | Assignee |
|---|---|---|---|
| 18815929 | SEMICONDUCTOR DEVICES | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18782386 | SEMICONDUCTOR PACKAGE HAVING A CONTROLLER | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18748414 | WIRING STRUCTURES AND METHODS OF MANUFACTURING THE SAME | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD |
| 18742302 | IMAGE SENSOR | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18598417 | IMAGE SENSORS | Non-Final OA | SAMSUNG ELECTRONICS CO., LTD. |
| 18598414 | NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18444359 | SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME | Non-Final OA | Samsung Electronics Co., Ltd. |
| 18381785 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF | Final Rejection | SAMSUNG ELECTRONICS CO., LTD. |
| 18624939 | WORD LINE PROTECTION METHOD IN THE BACKSIDE PROCESS OF A VERTICAL DYNAMIC RANDOM ACCESS MEMORY (DRAM) DEVICE | Non-Final OA | Yangtze Memory Technologies Co., Ltd. |
| 18839233 | IMAGING DEVICE | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18703685 | SEMICONDUCTOR DEVICE AND IMAGING APPARATUS | Non-Final OA | SONY SEMICONDUCTOR SOLUTIONS CORPORATION |
| 18841511 | SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT | Non-Final OA | KYOCERA Corporation |
| 18815131 | FORK SHEET FIELD EFFECT TRANSISTOR WITH INCREASED ELECTROSTATIC CONTROL | Non-Final OA | International Business Machines Corporation |
| 18755906 | INTERCONNECT STRUCTURE WITH HYBRID BOND ANTI-FUSES | Non-Final OA | International Business Machines Corporation |
| 18721677 | LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR | Non-Final OA | Sharp Display Technology Corporation |
| 18598157 | Heterostructures and Processes Of Making and Using Same | Non-Final OA | Government of the United States, as represented by the Secretary of the Air Force |
| 18679093 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF A MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE | Non-Final OA | SK hynix Inc. |
| 18459339 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | Kioxia Corporation |
| 18458284 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Final Rejection | Kioxia Corporation |
| 18179922 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | Non-Final OA | Kioxia Corporation |
| 18828356 | FRINGE CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR THE FRINGE CAPACITOR | Non-Final OA | TEXAS INSTRUMENTS INCORPORATED |
| 18359991 | SEMICONDUCTOR DEVICE HAVING A DOPED REGION UNDERLYING A GATE LAYER AND IN A BARRIER LAYER | Final Rejection | TEXAS INSTRUMENTS INCORPORATED |
| 18458877 | RECESSED GATE HEMT PROCESSING WITH REVERSED ETCHING | Final Rejection | STMicroelectronics International N.V. |
| 18514410 | VIAS WITH SELECTED GRAIN DISTRIBUTION | Final Rejection | Taiwan Semiconductor Manufacturing Company, Ltd. |
| 18789042 | FORMING DIELECTRIC FILM WITH HIGH RESISTANCE TO TILTING | Non-Final OA | Taiwan Semiconductor Manufacturing Co., Ltd. |
| 18422656 | PLASMA TREATMENT OF BARRIER AND LINER LAYERS | Non-Final OA | Applied Materials, Inc. |
| 18884144 | SEMICONDUCTOR DEVICE | Non-Final OA | ROHM CO., LTD. |
| 18792449 | SEMICONDUCTOR DEVICE | Non-Final OA | ROHM CO., LTD. |
| 18542393 | HIGH FREQUENCY DEVICE PACKAGES | Final Rejection | ANALOG DEVICES, INC. |
| 18816197 | SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING A SEMICONDUCTOR MODULE | Non-Final OA | FUJI ELECTRIC CO., LTD. |
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